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深圳市藍(lán)星宇電子科技有限公司>>光刻機(jī)/微納加工>>OAI 2000SM邊緣曝光系統(tǒng),OAI 2000AF曝光系統(tǒng)

OAI 2000SM邊緣曝光系統(tǒng),OAI 2000AF曝光系統(tǒng)

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OAI 2000SM邊緣曝光系統(tǒng),OAI 2000AF曝光系統(tǒng),OAI 2000型曝光系統(tǒng)可以配置為邊緣曝光系統(tǒng)(2000SM)或曝光系統(tǒng)(2000AF);這兩種配置都基于OAI經(jīng)過驗(yàn)證的,經(jīng)過時(shí)間測(cè)試的平臺(tái)。

詳細(xì)介紹

OAI 2000SM邊緣曝光系統(tǒng),OAI 2000AF曝光系統(tǒng)


詳細(xì)介紹

型號(hào)2000SM邊緣曝光系統(tǒng)

2000AF型曝光系統(tǒng)



OAI 2000型曝光系統(tǒng)可以配置為邊緣曝光系統(tǒng)(2000SM)或曝光系統(tǒng)(2000AF);這兩種配置都基于OAI經(jīng)過驗(yàn)證的,經(jīng)過時(shí)間測(cè)試的平臺(tái)。

兩種型號(hào)的2000型曝光系統(tǒng)包括UV光源,強(qiáng)度控制電源和機(jī)器人襯底處理子系統(tǒng)。 UV光源提供發(fā)散半角<2.0%的可調(diào)強(qiáng)度光束。電源從200W到2,000W。強(qiáng)度控制器傳感器直接連接到光源,用于精確的強(qiáng)度監(jiān)控。機(jī)器人襯底處理系統(tǒng)是微處理器控制的,并且可以被編程以適應(yīng)各種各樣的襯底尺寸。陰影掩模能力使得用戶能夠在保持非常接近掩模的同時(shí)對(duì)襯底的頂部進(jìn)行圖案化。在25微米的分離時(shí),這些系統(tǒng)能夠具有6微米的分辨率。

在SM配置中,邊緣珠曝光系統(tǒng)提供了一種經(jīng)濟(jì)有效的方法,使用標(biāo)準(zhǔn)陰影掩模技術(shù)進(jìn)行邊緣珠去除。掩模和基材切換可以快速且容易地實(shí)現(xiàn),從而增加了該大批量生產(chǎn)工具的通用性和生產(chǎn)量。

在AF配置中,2000型泛光曝光系統(tǒng)用于增強(qiáng)和/或增強(qiáng)生產(chǎn)和研發(fā)環(huán)境中的光刻過程。應(yīng)用包括光刻膠穩(wěn)定和改性,圖像反轉(zhuǎn)和PCM工藝。


Model 2000SM Edge-bead Exposure System

Model 2000AF Flood Exposure System

The OAI Model 2000 Exposure Systems may be configured as either an edge-bead exposure system (2000SM) or a flood exposure system (2000AF); both configurations are based on OAI's proven, time-tested platform.

Both versions of the Model 2000 Exposure System include a UV light source, intensity controlling power supply and robotic substrate handling subsystem. UV light sources provide adjustable intensity beams with divergence half-angles of <2.0%. Power supplies are available from 200W to 2,000W. Intensity controller sensors are linked directly to the light source for accurate intensity monitoring. The robotic substrate handling system is microprocessor controlled and may be programmed to accommodate a wide variety of substrate sizes. The shadow mask capability enables the user to pattern the top of a substrate while being held in very close proximity to the mask. At a separation of 25-microns, these systems are capable of 6-micron resolution.

In the SM configuration, the Edge-bead Exposure System provides a cost-effective method for edge-bead removal using standard shadow mask technology. Mask and substrate changeover can be accomplished quickly and easily adding to both versatility and throughput of this high-volume production tool.

In the AF configuration, the Model 2000 Flood Exposure System is used to augment, and/or enhance the photolithography processes in both production and R&D environments. Applications include photo resist stabilization and modification, image reversal and PCM processes.

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